PART |
Description |
Maker |
PTFA220041M |
High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz
|
Infineon Technologies AG
|
PTF211802A PTF211802E PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
|
http:// INFINEON[Infineon Technologies AG]
|
PTF211301 PTF211301A |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 130 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
|
Infineon Technologies AG
|
MAPLST0810-030CF MAPLST0810-030CF-05-2004 |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
|
MACOM[Tyco Electronics]
|
MAPLST0810-045CF |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
|
MACOM[Tyco Electronics]
|
MAPLST1900-060CF |
RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 60W, 26V
|
Tyco Electronics
|
MAPLST2122-015CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V
|
Tyco Electronics
|
MAPLST2122-030CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V
|
Tyco Electronics
|
0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦,28V的,1 GHz的LDMOS的场效应 60 Watt / 28V / 1 Ghz LDMOS FET 60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
|
PTFB090901FAV2R0 PTFB090901FAV2R250XTMA1 PTFB09090 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
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